Wafer Material:   Si,SiC,GaN,GaAs, sapphire, glass

Mode of Operation：Manual, Fully automatic, Semi-automatic

Wafer Lots:   25,50

Wafer Size:   50mm up to 200mm （Compatible mode is available）

Treatment process:    dry into dry out, dry into wet out

Etching rate:    0.1-1μm/min (related to the etching material and process)

Etching inhomogeneity:    ≤±5%

Chemical solution:

Phosphoric acid, hydrofluoric acid, buffer etching agent (BOE), aluminum etching agent (M2), nitric acid

Application process:

Acid etching, alkali etching

*This product is non-standard equipment, non-standard equipment is customized according to the specific manufacturing needs of the enterprise, with higher production efficiency and more accurate control ability, can meet the changing production needs.

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