Common Issues in Semiconductor Wafer Etching Process (2) （3）

Poor Plasma Stability: Uneven plasma or unstable discharge can lead to fluctuations in the etching rate, or even failure to generate effective plasma (e.g., when the pressure is too low).Impact of Key Components: Issues such as poor chamber sealing performance, corrosion of liners, and clogging of micro-pores in the gas distribution plate directly affect process repeatability.

​​Detailed Explanation of the Wet Photoresist Stripping Process​

The wet photoresist stripping process must be adjusted based on photoresist type (positive/negative), wafer material (silicon/metal), and process requirements to ensure both efficient photoresist removal and wafer integrity.

Common Issues in Semiconductor Wafer Etching Process (1): Process Parameter Control Problems

Process Parameter Control Problems.Insufficient Etch Selectivity.When the etch selectivity between the material being etched and the mask or underlying material is insufficient, it can lead to excessive mask consumption or unintended etching of the underlying material, affecting pattern fidelity.

Fundamental Differences Between Wet and Dry Etching

The dichotomy lies in isotropy vs. anisotropy. Wet etching retains niche uses for selective bulk removal, while dry etching underpins modern microelectronics due to its precision and controllability. Leading fabs employ both technologies in complementary steps.

Wet Electroplating Equipment

In advanced semiconductor manufacturing and packaging, electroplating is a cornerstone process for key steps such as metal interconnects, TSVs (Through-Silicon Vias), and RDLs (Redistribution Layers).