Single wafer clean

Single wafer wet clean is a process used in the semiconductor industry to clean a single semiconductor wafer, typically made of silicon, before it undergoes further processing steps such as photolithography, etching, or deposition. The goal of single wafer wet clean is to remove contaminants from the surface of the wafer without damaging the semiconductor material.

IMEC clean

IMEC-Clean is a wet cleaning method used to reduce the consumption of chemicals and DI water. The process first removes organic contaminants, creating a thin layer of chemical oxides that effectively remove particles. At the same time, a high concentration of ozone is injected into the DI water to form O3 water, which is then combined with other chemicals such as sulfuric acid to form a method of cleaning pollutants.

Wafer Clean

Wet wafer clean refers to the process of cleaning the surface of a semiconductor chip using a chemical solution. During semiconductor manufacturing, the surface of the chip is contaminated by various pollutants, such as organic matter, metal ions, particles, etc., which can negatively affect the performance and reliability of the chip. Therefore, before the next step of manufacturing, the chip surface needs to be cleaned to ensure manufacturing quality and reliability.

Post-CMP Clean

Post-CMP Clean refers to the cleaning performed after the chemical mechanical polishing (CMP) process. CMP is a commonly used semiconductor manufacturing technology used to flatten silicon wafers or other materials to make finer electronic devices.

Pre-oxidation cleaning

Pre-oxidation cleaning is a process used in semiconductor manufacturing to clean the surface of a silicon wafer before it undergoes an oxidation process. The goal of this cleaning step is to remove any contaminants, such as organic compounds or metal particles, from the surface of the wafer that could interfere with the oxidation process or introduce defects into the final device.

Si Etch

Si Etch refers to the process of removing silicon from a silicon-containing material. This can be achieved through the use of fluoride-based aqueous etch solutions or by water. In the latter case, acids are required to catalyze the dissolution reaction, or a base is needed to keep the reaction product, silicic acid, in solution. For the etching of silicon, an oxidation agent accelerates the reaction rate。