SiGe Etch Is an advanced semiconductor manufacturing technology used for fabricating microstructures and through-holes on SiGe materials. SiGe Material is a semiconductor material composed of silicon (Si) and germanium (Ge). It has the advantages of high speed electron mobility, high thermal conductivity and low dielectric constant, so it is widely used in high speed and low power consumption electronic devices.
SiGe Etch Is an advanced semiconductor manufacturing technology used for fabricating microstructures and through-holes on SiGe materials. SiGe Material is a semiconductor material composed of silicon (Si) and germanium (Ge). It has the advantages of high speed electron mobility, high thermal conductivity and low dielectric constant, so it is widely used in high speed and low power consumption electronic devices.
SiGe Etch Technology utilizes chemical reactions to remove the SiGe material to form the desired microstructure or through-hole. The technique uses specific chemical gases, such as chlorine (Cl2) and hydrogen (H2), that react with the SiGe material to produce a soluble substance, which then dissolve the substance and rinse it away with the solvent. This enables the removal of the SiGe material and the formation of the microstructure or through hole, while the control of the size and shape of the microstructure or through hole is very accurate.
