In semiconductor manufacturing, GaAs Etch usually refers to the technology of etching gallium arsenide (GaAs) materials.

GaAs Is a compound semiconductor material, with high frequency, high electron mobility, high firing performance and other superior characteristics, is widely used in optoelectronics and microelectronics industry. In the optoelectronics industry, GaAs can be used to make LED, LD, photovoltaic devices, etc.; in the microelectronics industry, GaAs can be used to make MESFET , HEMT, HBT , IC, microwave diode, Hall devices, etc.

GaAs Etch Technology utilizes chemical reactions to remove GaAs material to form the desired microstructure or through-holes. The technology uses specific chemical gases, such as hydrogen chloride and hydrogen fluoride, to react with GaAs materials to produce soluble substances, which then dissolve and rinse the resulting substances. This enables the removal of the GaAs material and the formation of the microstructure or through hole, while the control of the size and shape of the microstructure or through hole is very accurate.