In the field of semiconductor manufacturing, Cu Foil Etch is a technique for etching copper foils using chemical gases. The technique is mainly used to make electrical interconnection structures on semiconductor chips, such as copper wires or through-holes.

Cu Foil Etch The technology uses chemical reactions to remove the copper foil material to form the desired electrical interconnect structure. This technique uses specific chemical gases, such as chlorine gas (Cl2) or hydrogen chloride (HCl), that react with copper foil to produce soluble cuprous chloride (CuCl) or cuprous fluoride (CuF), which then dissolve and rinse the resulting cuprous chloride or cuprous fluoride using a solvent. This allows the removal and thinning of the copper foil and an electrical interconnection structure.

Cu Foil Etch Technology is very important to improve the performance and reliability of semiconductor chips. By accurately controlling the shape and size of the electrical interconnect structure, the current density, resistance and thermal properties can be optimized. In addition, Cu Foil Etch technology can improve the scalability and integration of chips, thus in smaller chips and higher performance.

It should be noted that the Cu Foil Etch technology requires a strict control of the parameters of chemical gas type and concentration, reaction temperature and time in the manufacturing process to ensure the processing quality and reliability. In addition, in order to prevent the short circuit and open circuit between the electrical interconnection structures, appropriate subsequent treatment processes such as hole wall insulation treatment and metallization treatment are required.

In short, Cu Foil Etch technology has important application value in the field of semiconductor manufacturing and can promote the progress and development of semiconductor technology.