Wafer Material:   Si,SiC,GaN,GaAs,InP

Wafer Size:    4/5/6/8/12 inch

Mode of Operation：Manual, Fully automatic

Electroplating type:   single sided / double-sided plating

Processing capacity:  1-4 pieces of single slot, multi-slot customization

Plating type:    copper plating, nickel, gold, silver, tin, etc

Electroplating method:    front plating, blind spot plating, TSV porous plating (depth ratio 20:1)

Coating uniformity:    5% -8%

Coated surface roughness:    <50nm

Hardness of the coating:    300℃ 30min 60HV

Plating shear stress:   when the coating thickness is above 10 μ m, the shear stress is> 8 ㎎ / μ m2

Coating layer bonding performance:   > 8 cN

Anode:    a soluble / insoluble anode

Anode fixture:    

Customized according to customer requirements, divided into sealing ring / two point / three point clamp

Electroplating tank: 

Equipped with cathode movement, cyclic filtration. The equipment is equipped with a cleaning tank, water gun and nitrogen gun

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